Download the PD54008S-E datasheet PDF.
This datasheet also covers the PD54008-E variant, as both devices belong to the same rf power transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 7 V in common source mode at frequencies of up to 1 GHz.
Note: The manufacturer provides a single datasheet file (PD54008-E-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for PD54008S-E (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
PD54008S-E. For precise diagrams, tables, and layout, please refer to the original PDF.
PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ PO...
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tures ■ Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solu
PD54008S-E Datasheet
