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LET9002 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9002 Description

LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT.
The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial a.

LET9002 Applications

* at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source mode at 26 V. LET9002 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It

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POWER TRANSISTORS Ldmos Enhanced Technology Plastic Package STMicroelectronics
STMicroelectronics LET9002-like datasheet