Datasheet Details
| Part number | LET9002 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 40.75 KB |
| Description | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| Datasheet |
 LET9002 Datasheet
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| Part number | LET9002 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 40.75 KB |
| Description | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| Datasheet |
LET9002 Datasheet
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The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz.
The LET9002 is designed for high gain and broadband performance operating in common source mode at 26 V.
LET9002 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.
LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 17 dB gain @.
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