SW7N60K mosfet equivalent, mosfet.
TO-220F
TO-251
* High ruggedness
* RDS(ON) (Max 0.6Ω)@VGS=10V
* Gate Charge (Typical 21nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
12 .
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced super-junction technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, excellent avalanche characteristics, low .
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