SW7N65B mosfet equivalent, n-channel to-220f mosfet.
* High ruggedness
* RDS(ON) (Max 1.4 Ω)@VGS=10V
* Gate Charge (Typical 19nC)
* Improved dv/dt Capability
* 100% Avalanche Tested TO-220F
SW7N65B
N-ch.
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially ex.
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