SW7N65DA
Description
Source 3 This power MOSFET is produced with advanced technology of SAMWIN.
Key Features
- High ruggedness
- Low RDS(ON) (Typ 1.4Ω)@VGS=10V
- Low Gate Charge (Typ 25nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application: LED , Charge, PC Power
