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SW7N60D - N-Channel MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-220F TO-220 TO-251 TO-252.
  • High ruggedness.
  • Low RDS(ON) (Typ 1.05Ω)@VGS=10V.
  • Low Gate Charge (Typ 30nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

📥 Download Datasheet

Datasheet Details

Part number SW7N60D
Manufacturer SEMIPOWER
File Size 1.00 MB
Description N-Channel MOSFET
Datasheet download datasheet SW7N60D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252  High ruggedness  Low RDS(ON) (Typ 1.05Ω)@VGS=10V  Low Gate Charge (Typ 30nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:UPS，Inverter， TV-POWER 1 23 1 23 1 23 1 23 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 600V ID : 7A RDS(ON) : 1.
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