SW7N60D mosfet equivalent, n-channel mosfet.
TO-220F TO-220 TO-251 TO-252
* High ruggedness
* Low RDS(ON) (Typ 1.05Ω)@VGS=10V
* Low Gate Charge (Typ 30nC)
* Improved dv/dt Capability
* 100% Ava.
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics..
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