SW6N60 mosfet equivalent, mosfet.
TO-220F
TO-251
TO-252
* High ruggedness
* RDS(ON) (Max 1.5Ω)@VGS=10V
* Gate Charge (Typical 29nC)
* Improved dv/dt Capability
* 100% Avalanche Tes.
These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on .
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