SW6N90 Overview
Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Key Features
- High ruggedness
- RDS(ON) (Max 2.3 Ω)@VGS=10V
- Gate Charge (Typical 40nC)
- Improved dv/dt Capability
- 100% Avalanche Tested 1 2 BVDSS : 900V ID : 6.0A RDS(ON) : 2.3ohm 2 3
