SW6N90 mosfet equivalent, n-channel to-262 mosfet.
* High ruggedness
* RDS(ON) (Max 2.3 Ω)@VGS=10V
* Gate Charge (Typical 40nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
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BVDSS : 900V ID .
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
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