SW6N60D mosfet equivalent, n-channel mosfet.
TO-220F TO-252 TO-251N
* High ruggedness
* Low RDS(ON) (Typ 1.4Ω)@VGS=10V
* Low Gate Charge (Typ 23nC)
* Improved dv/dt Capability
* 100% Avalanche .
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
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