RU30P4H mosfet equivalent, p-channel advanced power mosfet.
* -30V/-5A,
RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =80mΩ(Typ.)@VGS=-4.5V
* Low On-Resistance
* Super High Dense Cell Design
* Reliable and Rugged
* Le.
*Power management
*Load switch
*Battery protection
Pin Description
D D D D
G S S pin1 S
SOP-8
DDDD
(8)(7)(6.
D D D D
G S S pin1 S
SOP-8
DDDD
(8)(7)(6)(5)
G(4)
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Tem.
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