RU30P4C mosfet equivalent, p-channel advanced power mosfet.
* -25V/-4A,
RDS (ON) =45mΩ(Typ.)@VGS=-10V RDS (ON) =55mΩ(Typ.)@VGS=-4.5V RDS (ON) =75mΩ(Typ.)@VGS=-2.5V
* Low On-Resistance
* Super High Dense Cell Design
* Load Switch
*DC/DC Converter
Pin Description
D
G S
SOT23-3
D G
Absolute Maximum Ratings
Symbol
Parameter
.
D
G S
SOT23-3
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continu.
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