RU30P4B mosfet equivalent, p-channel advanced power mosfet.
* -25V/-4A,
RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =60mΩ(Typ.)@VGS=-4.5V RDS (ON) =80mΩ(Typ.)@VGS=-2.5V
* Low On-Resistance
* Super High Dense Cell Design
* Load Switch
Pin Description
D
G S
SOT23
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C.
D
G S
SOT23
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuou.
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