RU30P4C6 mosfet equivalent, p-channel advanced power mosfet.
* -30V/-4A,
RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =75mΩ(Typ.)@VGS=-4.5V
* Low On-Resistance
* Super High Dense Cell Design
* Reliable and Rugged
* Le.
* Load Switch
*DC/DC Converter
Pin Description
S D D
G
D
D
SOT23-6
D
G
Absolute Maximum Ratings
Symbol
P.
S D D
G
D
D
SOT23-6
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Dio.
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