RJK03M6DNS Overview
Silicon N Channel Power MOS FET Power Switching High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.6 m typ. (at VGS = 10 V) Pb-free Halogen-free RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 Preliminary Datasheet R07DS0771EJ0110 Rev.1.10
RJK03M6DNS Key Features
- High speed switching
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
- Pb-free
- Halogen-free