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RJK0393DPA - N-Channel Power MOSFET

Key Features

  • High speed switching.
  • Capable of 4.5V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance.
  • Pb-free.
  • Halogen-free Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJK0393DPA 30V, 40A, 4.3m max. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4 4321 G Preliminary Datasheet R07DS0925EJ0400 Rev.4.00 Mar 22, 2013 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3.