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HAT2114R, HAT2114RJ
Silicon N Channel Power MOS FET High Speed Power Switching
REJ03G0120-0100Z (Previous ADE-208-1544(Z)) Rev.1.00 Oct.06.2003
Features
• • • • Low on-resistance Capable of 4.5V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating
Outline
SOP-8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
Rev.1.00, Oct.06.2003, page 1 of 9
HAT2114R, HAT2114RJ
Absolute Maximum Ratings
(Ta = 25°C)
Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4.