uPA2560 mosfet equivalent, dual n-channel mosfet.
* 4.5 V drive available
* Low on-state resistance
RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2 A) RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2 A)
* Built-in gate p.
of portable equipments. Dual N-channel MOSFETs are assembled in one package, to
contribute minimize the equipments.
FEA.
The μ PA2560 is Dual N-channel MOSFETs designed for Back light
inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to
contribute minimize the equipments.
FEATURES
* 4.5 V drive.
Image gallery
TAGS
Download (Size : 196.10KB)