Datasheet4U Logo Datasheet4U.com

uPA2550 - DUAL P-CHANNEL MOSFET

Description

The μ PA2550 is dual P-channel MOSFETs designed for power management applications of portable equipments, such as load switch.

Dual P-channel MOSFETs are assembled in one package, to contribute minimize the equipments.

Features

  • 1.8 V drive available.
  • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 2.5 A) RDS(on)2 = 60 mΩ MAX. (VGS =.
  • 2.5 V, ID =.
  • 2.5 A) RDS(on)3 = 93 mΩ MAX. (VGS =.
  • 1.8 V, ID =.
  • 2.5 A).
  • Built-in gate protection diode.
  • Small and surface mount package (8-pin VSOF (2429)) 1 0.32±0.05 4 0.05 M S A 0.8±0.05 S (0.3) 1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1.

📥 Download Datasheet

Datasheet Details

Part number uPA2550
Manufacturer Renesas
File Size 290.29 KB
Description DUAL P-CHANNEL MOSFET
Datasheet download datasheet uPA2550 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UPA2502 N-CHANNEL MOS FIELD EFFECT TRANSISTOR NEC
UPA2503 N-CHANNEL MOS FIELD EFFECT TRANSISTOR NEC
UPA2510 P-CHANNEL MOS FIELD EFFECT TRANSISTOR NEC
UPA2001C NPN Silicon Epitaxial Darlington Transistor Array NEC
UPA2002C NPN Silicon Epitaxial Darlington Transistor Array NEC

Other Datasheets by Renesas

Part Number Description
UPA2520 MOS FIELD EFFECT TRANSISTOR
UPA2521 MOS FIELD EFFECT TRANSISTOR
uPA2560 Dual N-CHANNEL MOSFET
uPA2590 N- AND P-CHANNEL MOSFET
UPA2592T1H N- AND P-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2550 DUAL P-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The μ PA2550 is dual P-channel MOSFETs designed for power management applications of portable equipments, such as load switch. Dual P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.17±0.05 0 to 0.025 2.8±0.1 2.4±0.1 FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) RDS(on)2 = 60 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A) RDS(on)3 = 93 mΩ MAX. (VGS = −1.8 V, ID = −2.5 A) • Built-in gate protection diode • Small and surface mount package (8-pin VSOF (2429)) 1 0.32±0.05 4 0.05 M S A 0.8±0.05 S (0.
Published: |