UPA2520 transistor equivalent, mos field effect transistor.
* Low on-state resistance
RDS(on)1 = 13.2 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 17 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)
* Built-in gate protection diode
* S.
of portable equipments.
PACKAGE DRAWING (Unit: mm)
2.9±0.1 0.65 8
5
A
0.17±0.05
FEATURES
* Low on-state resist.
The μ PA2520 is N-channel MOS Field Effect Transistor
designed for DC/DC converter and power management applications of portable equipments.
PACKAGE DRAWING (Unit: mm)
2.9±0.1 0.65 8
5
A
0.17±0.05
FEATURES
* Low on-state resistance
RDS(on)1.
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