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UPA2592T1H - N- AND P-CHANNEL MOSFET

Description

DC/DC converters and power management applications of portable equipments.

N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments.

Features

  • 2.5 V drive available.
  • Low on-state resistance N-channel RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2 A) RDS(on)2 = 65 mΩ MAX. (VGS = 2.5 V, ID = 2 A) P-channel RDS(on)1 = 80 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 2 A) RDS(on)2 = 140 mΩ MAX. (VGS =.
  • 2.5 V, ID =.
  • 1 A).
  • Built-in gate protection diode.
  • Small and surface mount package (8-pin VSOF (2429)) 0.8±0.05 1 0.32±0.05 S 4 0.05 M S A (0.3) N-channel 1: Source 2: Gate 7, 8: Drain P-c.

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Datasheet Details

Part number UPA2592T1H
Manufacturer Renesas Electronics
File Size 258.22 KB
Description N- AND P-CHANNEL MOSFET
Datasheet download datasheet UPA2592T1H Datasheet
Additional preview pages of the UPA2592T1H datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2592T1H N- AND P-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The μ PA2592T1H is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.17±0.05 0 to 0.025 2.8±0.1 2.4±0.1 FEATURES • 2.5 V drive available • Low on-state resistance N-channel RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2 A) RDS(on)2 = 65 mΩ MAX. (VGS = 2.5 V, ID = 2 A) P-channel RDS(on)1 = 80 mΩ MAX. (VGS = −4.5 V, ID = −2 A) RDS(on)2 = 140 mΩ MAX. (VGS = −2.5 V, ID = −1 A) • Built-in gate protection diode • Small and surface mount package (8-pin VSOF (2429)) 0.8±0.05 1 0.32±0.
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