RJK5026DPP-M0 N-Channel MOSFET
• Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Outline
RENESAS Package co.
or use by the military, including but not limited to the development of weapons of mass destruction..
Image gallery