RJH65T47DPQ-A0 datasheet, igbt equivalent, Renesas

Features and benefits

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Tren.

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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