RJH6086BDPK
RJH6086BDPK is IGBT manufactured by Renesas.
Features
- Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load)
- Low on-state voltage
- Fast recovery diode R07DS0470EJ0100 Rev.1.00 Sep 28, 2011
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C 4
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
Absolute Maximum Ratings
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction temperature Storage temperature
.Data Sheet.net/
(Tc = 25°C)
Symbol VCES VGES IC ic(peak) Note1 IDF(peak) Note2 PC j-c Tj Tstg Ratings 600 ±30 45 90 90 198.4 0.63 150
- 55 to +150 Unit V V A A A W /W °C °C
Notes: 1. Pulse width limited by safe operating area. 2. Pulse width limited by maximum junction temperature.
R07DS0470EJ0100 Rev.1.00 Sep 28, 2011
Page 1 of 7
Datasheet pdf
- http://..co.kr/
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to Emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF trr Min 3.0
- - Typ 2.65 3.4 1420 165 15 41 71 84 36 1.4 100 Max 10 ±1 5.5 3.5 1.9
- Unit A A V V V p F p F p F ns ns ns ns V ns Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 m A IC = 22 A, VGE = 15 V Note3 IC = 45 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1MHz IC = 30 A VCC = 300 V, VGE = 15 V Rg = 5 Inductive Load IF = 30 A Note3 IF = 30 A di F/dt = 100 A/s
Collector to emitter diode forward voltage Collector to emitter diode reverse recovery time Notes: 3. Pulse test
.Data Sheet.net/
R07DS0470EJ0100 Rev.1.00 Sep 28, 2011
Page 2 of 7
Datasheet...
