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RJH6086BDPK - IGBT

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Description

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Features

  • Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load).
  • Low on-state voltage.
  • Fast recovery diode R07DS0470EJ0100 Rev.1.00 Sep 28, 2011 Outline.

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Datasheet Details

Part number RJH6086BDPK
Manufacturer Renesas
File Size 156.48 KB
Description IGBT
Datasheet download datasheet RJH6086BDPK Datasheet
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Full PDF Text Transcription

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Preliminary Datasheet RJH6086BDPK 600 V - 45 A - IGBT High Speed Power Switching Features  Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load)  Low on-state voltage  Fast recovery diode R07DS0470EJ0100 Rev.1.00 Sep 28, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction temperature Storage temperature www.DataSheet.
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