RJH65T04BDPM-A0 igbt equivalent, igbt.
* Trench gate and thin wafer technology
* Built in fast recovery diode in one package
* Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at .
Power Factor Correction circuit
Key Performance
Type RJH65T04BDPM-A0
VCES 650 V
IC 30 A
VCE(sat), TC=25C 1.5 V
IF.
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