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RJH65T04BDPM-A0 - IGBT

Features

  • Trench gate and thin wafer technology.
  • Built in fast recovery diode in one package.
  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C).
  • Quality grade: Standard Datasheet R07DS1366EJ0200 Rev.2.00 Oct.05.2022.
  • High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 , Ta=25 C, inductive load).
  • Operation frequency (20kHz ≤ f ˂ 40kHz).

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RJH65T04BDPM-A0 650V - 30A - IGBT Power Switching Features  Trench gate and thin wafer technology  Built in fast recovery diode in one package  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C)  Quality grade: Standard Datasheet R07DS1366EJ0200 Rev.2.00 Oct.05.2022  High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 , Ta=25 C, inductive load)  Operation frequency (20kHz ≤ f ˂ 40kHz)  Applications: Power Factor Correction circuit Key Performance Type RJH65T04BDPM-A0 VCES 650 V IC 30 A VCE(sat), TC=25C 1.5 V IF 50 A Tj 175 C Outline RENESAS Package code: PRSS0003ZP-A (Package name: TO-3PFP) C 1. Gate G 2. Collector 3. Emitter E 1 23 R07DS1366EJ0200 Rev.2.00 Oct.05.
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