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RJH65S04DPQ-A0 - IGBT

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Description

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Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Tj = 125C, inductive load) R07DS0849EJ0001 Rev.0.01 Jul 06, 2012 Outline.

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Datasheet Details

Part number RJH65S04DPQ-A0
Manufacturer Renesas
File Size 127.29 KB
Description IGBT
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Full PDF Text Transcription

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Preliminary Datasheet RJH65S04DPQ-A0 650V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Tj = 125C, inductive load) R07DS0849EJ0001 Rev.0.01 Jul 06, 2012 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.
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