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RJH6087BDPK - High Speed Power Switching

Description

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Features

  • Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load).
  • Low on-state voltage.
  • Fast recovery diode R07DS0389EJ0100 Rev.1.00 May 11, 2011 Outline.

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Datasheet Details

Part number RJH6087BDPK
Manufacturer Renesas
File Size 168.10 KB
Description High Speed Power Switching
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Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching Features • Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode R07DS0389EJ0100 Rev.1.00 May 11, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 www.DataSheet.
Published: |