RJH60M0DPQ-A0 igbt equivalent, igbt.
* Short circuit withstand time (8 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
* Built i.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 110.71KB)