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RJH60M3DPP-M0 Datasheet, Renesas

RJH60M3DPP-M0 igbt equivalent, igbt.

RJH60M3DPP-M0 Avg. rating / M : 1.0 rating-11

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RJH60M3DPP-M0 Datasheet

Features and benefits


* Short circuit withstand time (8 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)
* Built i.

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

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TAGS
RJH60M3DPP-M0
IGBT
RJH60M3DPE
RJH60M3DPQ-A0
RJH60M0DPQ-A0
Renesas
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