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RJH60M1DPP-M0 IGBT

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Description

Preliminary Datasheet RJH60M1DPP-M0 600V - 8A - IGBT Application: Inverter R07DS0528EJ0300 Rev.3.00 May 25, 2012 .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* Short circuit withstand time (8 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode (75 ns typ. ) in one package
* Trench gate and thin wafer technology
* High speed switching tf = 70 ns

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