NP109N055PUJ datasheet, fet equivalent, Renesas

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Features and benefits

* Super low on-state resistance RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 55 A)
* Low input capacitance Ciss = 6900 pF TYP.
* Designed for automotive applicatio.

Application

ORDERING INFORMATION PART NUMBER NP109N055PUJ-E1B-AY Note NP109N055PUJ-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKI.

Description

The NP109N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP109N055PUJ-E1B-AY Note NP109N055PUJ-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 1000 p/reel No.

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