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NP109N04PUK Datasheet, Renesas

NP109N04PUK transistor equivalent, mos field effect transistor.

NP109N04PUK Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 220.35KB)

NP109N04PUK Datasheet
NP109N04PUK
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 220.35KB)

NP109N04PUK Datasheet

Features and benefits


* Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A)
* Low Ciss: Ciss = 7200 pF TYP. (VDS = 25 V)
* Designed for automotive applicat.

Application

Features
* Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A)
* Low Ciss: Ciss = 7200.

Description

The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A)
* Low Ciss: Ciss = 7200 pF TYP. (VDS = 25 V)

Image gallery

NP109N04PUK Page 1 NP109N04PUK Page 2 NP109N04PUK Page 3

TAGS

NP109N04PUK
MOS
FIELD
EFFECT
TRANSISTOR
Renesas

Manufacturer


Renesas (https://www.renesas.com/)

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