Datasheet4U Logo Datasheet4U.com

HAF1008S - P-Channel MOSFET

Download the HAF1008S datasheet PDF. This datasheet also covers the HAF1008 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This FET has the over temperature shut

down capability sensing to the junction temperature.

in over temperature shut

down circuit in the gate area.

down the gate voltage in case of high junction temperature lik

Features

  • Logic level operation (-4 to -6 V Gate drive).
  • High endurance capability against to the short circuit.
  • Built.
  • in the over temperature shut.
  • down circuit.
  • Latch type shut.
  • down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temperature Sencing Circuit Latch Circuit Gate Shutdown Circuit S 1 2 3 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, May.13.2003, page 1 of 11 HAF1008(L), HAF1008(S) Absolute Maxi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HAF1008-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
HAF1001 P-Channel MOSFET Hitachi Semiconductor
HAF1002 P-Channel MOSFET Hitachi Semiconductor
HAF1002L P-Channel MOSFET Hitachi Semiconductor
HAF1002S P-Channel MOSFET Hitachi Semiconductor
HAF1009 Silicon P-Channel MOSFET Renesas Technology

Other Datasheets by Renesas

Part Number Description
HAF1008 P-Channel MOSFET
HAF1008L P-Channel MOSFET
HAF1010RJ P-Channel MOSFET
HAF2015RJ N-Channel MOSFET
HAF2017 Silicon N-Channel Power MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Power Switching REJ03G0027-0100Z Rev.1.00 May.13.2003 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • Logic level operation (-4 to -6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temperature Sencing Circuit Latch Circuit Gate Shutdown Circuit S 1 2 3 1 2 3 1. Gate 2.
Published: |