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Prisemi

PNMT6N2 Datasheet Preview

PNMT6N2 Datasheet

Transistor

No Preview Available !

Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.
PNMT6N2 is composed by a transistor and a MOSFET
Transistor:
Very low collector to emitter saturation voltage
DC current gain >100
3A continuous collector current
PNP epitaxial planar silicon transistor
MOSFET:
VDS(V)
40
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
4.5@ VGS=4V
0.8 to 1.6
ID(A)
0.18
Transistor
PNMT6N2
Transistor with N-MOSFET
Top View
6C5C4S
7(C) 8(B/D)
1E2E3G
Bottom View
4S5C6C
D) (C
3G2E1E
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter -Base Breakdown Voltage
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation @25°C
Storage Temperature
Max. Operating Junction Temperature
Symbol
V (BR)CEO
V (BR)CBO
V (BR)EBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Conditions
IC =-10mA
IC =-0.1mA
IE =-0.1mA
Value
-30
-40
-5
-3
-6
-0.2
-0.5
1.2
-65~150
150
Units
V
V
V
A
A
A
A
W
°C
°C
Rev.06.5
1 www.prisemi.com




Prisemi

PNMT6N2 Datasheet Preview

PNMT6N2 Datasheet

Transistor

No Preview Available !

Absolute maximum rating@25
Parameter
Symbol
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Collector Cut-off Current (IE=0)
Emitter Cut-off Current(IC=0)
MOSFET
VBE(sat)
ICBO
IEBO
PNMT6N2
Transistor with N-MOSFET
Conditions
IC=-1mA,VCE=-5.0V
IC=-1A,VCE=-5.0V
IC=-0.1A,IB=-1mA
IC=-0.5A,IB=-50mA
IC=-1A,IB=-100mA
IC=-1A,IB=-0.05mA
VCB=-40V
VCB=-30V TC=125°C
VEB=-5V
Min.
150
100
-
-
-
Typ.
Max.
-
-0.14
-0.17
-0.31
-1.1
-0.1
-20
-0.1
Units
-
V
V
μA
μA
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
VDSS
ID =10μA,VGS=0V
IDSS VDS =35V,VGS=0V
IGSS VDS =0V,VGS=±15V
VGS(th)
VDS =VGS, ID =250μA
RDS(ON)
VGS=4.5V, ID =0.2A
DYNAMIC PARAMETERS
CISS
CDSS
CRSS
VGS=0V, VDS =25V,
f=1MHz
SWITCHING PARAMETERS
td(on)
td(off)
VDS=30V, VGS =10V,
RG=25Ω, RL=150Ω
ID =0.2A
Min. Typ. Max. Units
40 -
-V
- - 1 μA
- - ±1 μA
0.6 - 1.5 V
- - 4Ω
- - 40 pF
- - 20 pF
- - 5 pF
- - 20 ns
- - 20 ns
Rev.06.5
2 www.prisemi.com


Part Number PNMT6N2
Description Transistor
Maker Prisemi
PDF Download

PNMT6N2 Datasheet PDF






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