PNMT30V2A
Description
The MOSFET provide the best bination of fast switching , low on-resistance and cost-effectiveness.
- Trench Power MV MOSFET technology
- Voltage controlled small signal switch
- Low input Capacitance
- Fast Switching Speed
- Low Input / Output Leakage
MOSFET Product Summary
VDS(V) 30
RDS(on)(mΩ) 95@VGS = 4.5V
ID(A) 2.0
PNMT30V2A N-Channel MOSFET
SOT-23(Top View)
Applications
- Battery operated systems
- Solid-state relays
- Direct logic-level interface：TTL/CMOS
Absolute maximum rating@25℃
Circuit Diagram
D(3)
NT32A
G(1)
S(2)
Marking (Top View)
Rating
Symbol
Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current Total Power Dissipation1) Avalanche Energy, Single Pulse2) Junction and Storage Temperature Range
VDS VGS ID IDM PD EAS TJ,TSTG
Note 1. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum remended pad layout. 2. Test Condition : VDS=30V,VGS=10V,L=0.1m H.
Value 30
±12 2.0 9.0 0.75 2.41 -55~+150
Rev.06.1
Un...
