PNMT100V2
Description
The MOSFET provide the best bination of fast switching , low on-resistance and cost-effectiveness.
- Trench Power MV MOSFET technology
- Voltage controlled small signal switch
- Low input Capacitance
- Fast Switching Speed
- Low Input / Output Leakage
MOSFET Product Summary
VDS(V) 100
RDS(on)(mΩ) 280@VGS = 10V 400@VGS = 4.5V
ID(A) 2
Mechanical Data
- SOT-23 Small Outline Plastic Package.
- Epoxy UL: 94V-0.
- Mounting Position: Any.
Absolute maximum rating@25℃
Rating Drain-source Voltage Gate-source Voltage Drain Current Continuous Source-Drain Diode Current Pulsed Source Current Total Power Dissipation Thermal Resistance Junction-to-Ambient Junction Temperature Storage Temperature
Rev.06.2
PNMT100V2 N-Channel MOSFET
Top View
Circuit Diagram
2N10
Marking (Top View)
Symbol VDS VGS ID IS ISM PD RθJA TJ TSTG
Value 100 ±20 2.0 1.1 7.0 400 312.5 150
-55~+150
Units V V A A A m W ℃/W
℃ ℃
.prisemi.
N-Channel MOSFET
Electrical characteristics per...
