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PNMT3400 - N-Channel MOSFET

General Description

Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switching MOSFET Product Summary VDS(V) 30 RDS(on)(mΩ) 28@VGS = 10V 33@VGS = 4.5V 52@VGS = 2.5V ID(A) 5.8 Applications Battery protection Load switch Power management PNMT

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Datasheet Details

Part number PNMT3400
Manufacturer Prisemi
File Size 1.15 MB
Description N-Channel MOSFET
Datasheet download datasheet PNMT3400 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description  Trench Power LV MOSFET technology  High density cell design for low RDS(ON)  High Speed switching MOSFET Product Summary VDS(V) 30 RDS(on)(mΩ) 28@VGS = 10V 33@VGS = 4.5V 52@VGS = 2.5V ID(A) 5.8 Applications  Battery protection  Load switch  Power management PNMT3400 N-Channel MOSFET Top View Circuit Diagram 3400 Absolute maximum rating@25℃ Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current1) TA=25℃ @ Steady State TA=70℃ @ Steady State Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State2) Junction and Storage Temperature Range Notes： 1) Pulse Test: Pulse Width≤300μs,Duty cycle ≤2%. 2) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Rev.