Datasheet4U Logo Datasheet4U.com

PNMT2302 - N-Channel MOSFET

General Description

Trench Power LV MOSFET technology High Power and current handing capability MOSFET Product Summary VDS(V) 20 RDS(on)(mΩ) 30@VGS = 4.5V 45@VGS = 2.5V ID(A) 4.0 Applications PWM application Load switch PNMT2302 N-Channel MOSFET Top View Circuit Diagram 2302 Absolute max

📥 Download Datasheet

Datasheet Details

Part number PNMT2302
Manufacturer Prisemi
File Size 1.06 MB
Description N-Channel MOSFET
Datasheet download datasheet PNMT2302 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PNM Precision Thin Film Non-Magnetic Resistor Vishay
PNM-2751L-R MICROPHONE Projects Unlimited
PNM-3546L-R MICROPHONE Projects Unlimited
PNM-5250L-R MICROPHONE Projects Unlimited
PNM0402 Precision Thin Film Non-Magnetic Resistor Vishay

Other Datasheets by Prisemi

Part Number Description
PNMT20V2A N-Channel MOSFET
PNMT20V2SA N-Channel MOSFET
PNMT20V6 N-Channel MOSFET
PNMT100V2 N-Channel MOSFET
PNMT30V2A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description  Trench Power LV MOSFET technology  High Power and current handing capability MOSFET Product Summary VDS(V) 20 RDS(on)(mΩ) 30@VGS = 4.5V 45@VGS = 2.5V ID(A) 4.0 Applications  PWM application  Load switch PNMT2302 N-Channel MOSFET Top View Circuit Diagram 2302 Absolute maximum rating@25℃ Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current1) TA=25℃ @ Steady State TA=70℃ @ Steady State Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State2) Junction and Storage Temperature Range Notes： 1) Pulse Test: Pulse Width≤300μs,Duty cycle ≤2%. 2) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Rev.06 1 Marking (Top View) Symbol VDS VGS ID IDM PD RθJA TJ,TSTG Value 20 ±10 4.0 3.5 18 1.