Datasheet Details
| Part number | PNMT20V6 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 209.30 KB |
| Description | N-Channel MOSFET |
| Download | PNMT20V6 Download (PDF) |
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| Part number | PNMT20V6 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 209.30 KB |
| Description | N-Channel MOSFET |
| Download | PNMT20V6 Download (PDF) |
|
|
|
The enhancement mode MOS is extremely high density cell and low on-resistance.
PNMT20V6 N-Channel MOSFET D（3） VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.024@ VGS=4.5V 5.5 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS ID =250μA,VGS=0V IDSS VDS =16V,VGS=0V IGSS VDS =0V,VGS=±8V VGS(th) VDS =VGS, ID =250μA RDS(ON) VGS=4.5V, ID =4.5A VGS=2.5V, ID =2A DYNAMIC PARAMETERS CISS CDSS CRSS VGS=0V, VDS =15V, f=1MHz SWITCHING PARAMETERS td(on) td(off) VDS=10V, VGS =4.5V, RG=10Ω, ID =1A Min.
Typ.
Description The enhancement mode MOS is extremely high density cell and low on-resistance.
PNMT20V6 N-Channel MOSFET D（3） VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.024@ VGS=4.5V 5.
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