PNMT20V6 - N-Channel MOSFET

Datasheet Summary

Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

Prisemi

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Datasheet Details

Part number	PNMT20V6
Manufacturer	Prisemi
File Size	209.30 KB
Description	N-Channel MOSFET
Datasheet	PNMT20V6 Datasheet
Additional preview pages of the PNMT20V6 datasheet.

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PNMT20V6 N-Channel MOSFET D（3） VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.024@ VGS=4.5V 5.5 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS ID =250μA,VGS=0V IDSS VDS =16V,VGS=0V IGSS VDS =0V,VGS=±8V VGS(th) VDS =VGS, ID =250μA RDS(ON) VGS=4.5V, ID =4.5A VGS=2.

Published: Feb 25, 2020 |