PNM723T703E0-2 datasheet, mosfet equivalent, Prisemi

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Application

The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） MOSFET Product Summary VDS(V) 40 r.

Description

PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） MOSFET Product Summary VDS(V) 40 rDS(on)(Ω) 3.5@ VGS=10V VGS(th)(V) 1 to 2.0 ID(A) 0.18 G（1） S（2）.

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