PNM723T30V01
Description
PNM723T30V01 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.
PNM723T30V01 N-Channel MOSFET
VDS(V) 30
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
7@ VGS=2.5V,ID=10m A
0.5 to 1.5
Mechanical data
- Halogen Free
ID(A) 0.1
D（3） G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance Source-Drain Diode Forward Voltage
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Symbol
Conditions
OFF CHARACTERISTICS
VDSS
ID =10μA,VGS=0V
IDSS
VDS =30V,VGS=0V
IGSS
VDS =0V,VGS=±20V
VGS(th)
VDS =VGS, ID =250μA
VGS=2.5V, ID =1m A
RDS(ON)
VGS=2.5V, ID =10m A VGS=4V, ID =10m A
VGS=10V, ID =100m A g FS
VDS=5V, ID =0.1A
VFSD (V)
ID=100m A,VGS=0V
DYNAMIC...
