Description
PNM723T30V01 is designed for high speed switching applications
The enhancement mode MOS is extremely high density cell and low on-resistance.
PNM723T30V01
N-Channel MOSFET
VDS(V)
30
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
7@ VGS=2.5V,ID=10mA 0.5 to 1.5
ID(A)
0.1
D（3）
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
OFF CHARACTERISTICS
VDSS
ID =10μA,VGS=0V
IDSS
IGSS
VGS(th)
VDS =30V,VGS=0V
VDS =0V,VGS=±20V
VDS =VGS, ID =250μA
VGS=2.5V, ID =1mA
RDS(ON)
VGS=2.5V, ID =10mA
VGS=4V, ID =10mA
VGS=10V, ID =100mA
gFS VDS=5V, ID =0.1A
VFSD (V)
ID=100mA,VGS=0V
DYNAMIC PARAMETERS
CISS
COSS
CRSS
VGS=0V, VDS =25V,
f=1MHz
Min. Typ. Max. Units
30 -
-
--1
- - ±1
0.5 - 1.5
6.5 9
79
-46
-35
- 0.2 -
0.75 1
V
μA
μA
V
Ω
Ω
Ω
Ω
S
V
- - 40 pF
- - 10 pF
- - 5 pF
Rev.06.2
1 www.prisemi.com
