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PNM723T30V01 Datasheet Preview

PNM723T30V01 Datasheet

N-Channel MOSFET

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Description
PNM723T30V01 is designed for high speed switching applications
The enhancement mode MOS is extremely high density cell and low on-resistance.
PNM723T30V01
N-Channel MOSFET
VDS(V)
30
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
7@ VGS=2.5V,ID=10mA 0.5 to 1.5
ID(A)
0.1
D3
G1
S2
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
OFF CHARACTERISTICS
VDSS
ID =10μA,VGS=0V
IDSS
IGSS
VGS(th)
VDS =30V,VGS=0V
VDS =0V,VGS=±20V
VDS =VGS, ID =250μA
VGS=2.5V, ID =1mA
RDS(ON)
VGS=2.5V, ID =10mA
VGS=4V, ID =10mA
VGS=10V, ID =100mA
gFS VDS=5V, ID =0.1A
VFSD (V)
ID=100mA,VGS=0V
DYNAMIC PARAMETERS
CISS
COSS
CRSS
VGS=0V, VDS =25V,
f=1MHz
Min. Typ. Max. Units
30 -
-
--1
- - ±1
0.5 - 1.5
6.5 9
79
-46
-35
- 0.2 -
0.75 1
V
μA
μA
V
Ω
Ω
Ω
Ω
S
V
- - 40 pF
- - 10 pF
- - 5 pF
Rev.06.2
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Prisemi

PNM723T30V01 Datasheet Preview

PNM723T30V01 Datasheet

N-Channel MOSFET

No Preview Available !

N-Channel MOSFET
PNM723T30V01
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
Symbol
Conditions
SWITCHING PARAMETERS
Qg
Qgs
Qgd
VGS=4.5V, VDS =6V,
ID =0.1A
td(on)
tr
td(off)
VDS =30V, VGS =10V,
RG=25Ω, RL=150Ω,ID =0.1A
tf
Min. Typ. Max. Units
0.5 nC
0.2 nC
0.2 nC
-3
ns
- 3.5
ns
-5
ns
- 2.5
ns
Absolute maximum rating@25
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Total Power Dissipation TA=25
Symbol
VDS
VGS
ID
ID
PD
Value
30
±20
0.10
0.36
150
Units
V
V
A
A
mW
Typical Characteristics
11.0
0.08.8
VGS=10V
0.06.6
0.06.6
VDS=5V
0.40.4
0.04.4 VGS=4V
0.02.2
VGS=2.5V
00
00.0 00..55 11.0 11..55 22.0 22..55 33.0 33..55 4.40 44.5.5 5.05
Drain-to-Source Voltage :VDS (V)
Fig 1. On-VRDeSgio(nV)Characteristics
0.20.2
00
00.0
Rev.06.2
2
TJ=125
TJ=25
11.0 22.0 33.0 44.0
Gate-to-Source Voltage :VGS (V)
Fig 2. TranVsGferSC(Vha)racteristics
5.50
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Part Number PNM723T30V01
Description N-Channel MOSFET
Maker Prisemi
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PNM723T30V01 Datasheet PDF






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