PNM723T703E0-2
Description
PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.
PNM723T703E0-2 N-Channel MOSFET
D（3）
VDS(V) 40
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
7.5@ VGS=10V
0.5 to 1.5
ID(A) 0.18
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage Maximum Body-Diode Continuous
Current
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain(Miller) Charge
Symbol
Conditions
OFF CHARACTERISTICS
VDSS
ID =250μA,VGS=0V
IDSS
VDS =40V,VGS=0V
IGSS
VDS =0V,VGS=±20V
VGS(th)
VDS =VGS, ID =250μA
RDS(ON)
VGS=5V, ID =0.05A VGS=10V, ID =0.5A
DYNAMIC PARAMETERS
CISS CDSS CRSS
VGS=0V, VDS =25V, f=1MHz
Qg Qgs...
