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PNM523T60V02 - N-Channel MOSFET

Description

PNM523T60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PNM523T60V02
Manufacturer Prisemi
File Size 142.58 KB
Description N-Channel MOSFET
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Description PNM523T60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. PNM523T60V02 N-Channel MOSFET D（3） VDS(V) 60 MOSFET Product Summary RDS(on)(Ω) VGS(th)(V) 2.0@ VGS=10V 0.5 to 1.3 ID(A) 0.18 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS VDSS IDSS IGSS VGS(th) RDS(ON) ID =10μA,VGS=0V VDS =40V,VGS=0V VDS =0V,VGS=±20V VDS =VGS, ID =250μA VGS=5V, ID =0.
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