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Potens semiconductor

PMEN138S Datasheet Preview

PMEN138S Datasheet

N-Channel MOSFETs

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50V N-Channel MOSFETs
PMEN138S
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
D
S
G
G
S
BVDSS
50V
RDSON
3.5
ID
0.3A
Features
50V,0.3A, RDS(ON) =3.5Ω@VGS=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
G-S ESD Protection Diode Embedded
Applications
Motor Drive
Power Tools
LED Lighting
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous (TC=25)
Drain Current Continuous (TC=100)
Drain Current Pulsed1
Power Dissipation (TC=25)
Power Dissipation Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Rating
50
±20
0.3
0.2
1.2
0.35
0.003
-50 to 150
-50 to 150
Units
V
V
A
A
A
W
W/
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Typ.
---
Max.
357
Unit
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PMEN138S Datasheet Preview

PMEN138S Datasheet

N-Channel MOSFETs

No Preview Available !

50V N-Channel MOSFETs
PMEN138S
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VDS=50V , VGS=0V , TJ=25
VDS=40V , VGS=0V , TJ=125
VGS=±20V , VDS=0V
Min.
50
---
---
---
---
Typ.
---
0.04
---
---
---
Max.
---
---
1
100
±10
Unit
V
V/
uA
uA
uA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
gfs Forward Transconductance
VGS=10V , ID=0.5A
VGS=VDS , ID =250uA
VDS=10V , ID=0.1A
--- 1.2 3.5
1 1.6 2.5 V
--- -4 --- mV/
--- 0.24 ---
S
Dynamic and switching Characteristics
Qg Total Gate Charge2 , 3
Qgs Gate-Source Charge2 , 3
VDS=30V , VGS=10V , ID=0.2A
Qgd Gate-Drain Charge2 , 3
Td(on)
Tr
Turn-On Delay Time2 , 3
Rise Time2 , 3
VDD=30V , VGS=10V , RG=6
Td(off)
Turn-Off Delay Time2 , 3
ID=0.2A
Tf Fall Time2 , 3
Ciss Input Capacitance
Coss Output Capacitance
VDS=10V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
--- 1.1
2
--- 0.1 0.2
--- 0.23 0.5
--- 3
6
--- 5 10
--- 14 27
--- 9 17
--- 30.6 45
--- 5.5 10
--- 4
8
nC
ns
pF
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time2
Reverse Recovery Charge2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
VGS=30V,IS=1A , dI/dt=100A/µs
TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=1mH,IAS=7A.,RG=25,Starting TJ=25
3. The data tested by pulsed , pulse width 300us , duty cycle 2%.
4. Essentially independent of operating temperature.
Min.
---
---
---
---
---
Typ.
---
---
---
---
---
Max.
0.3
1.2
1
---
---
Unit
A
A
V
ns
nC
Potens semiconductor corp.
2
Ver.1.00


Part Number PMEN138S
Description N-Channel MOSFETs
Maker Potens semiconductor
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