PDS6810 mosfets equivalent, n-channel mosfets.
* 60V, 4.5A, RDS(ON) =54mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Mo.
SOP8 Dual Pin Configuration
D2 D1 D2 D1
D1 G1
S1G1S2 G2
S1
G2
D2 S2
BVDSS 60V
RDSON 54m
ID 4.5A
Features
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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