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Potens semiconductor

PDS6710 Datasheet Preview

PDS6710 Datasheet

N+P Channel MOSFETs

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60V N+P Dual Channel MOSFETs
General Description
These N+P dual Channel enhancement mode power
field effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation
mode. These devices are well suited for high efficiency
fast switching applications.
SOP8 Pin Configuration
D2
D2
D1
D1
G2 G1
S2
S1G1
D1
G2
S1
D2
2
S2
PDS6710
BVDSS
60V
-60V
RDSON
54m
105m
ID
4.5A
-3.5A
Features
Fast switching
Green Device Available
Suit for 4.5V Gate Drive Applications
Applications
DC Fan
Motor Drive Applications
Networking
Half / Full Bridge Topology
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous (TC=25)
Drain Current Continuous (TC=100)
Drain Current Pulsed1
Power Dissipation (TC=25)
Power Dissipation Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Rating
60 -60
±20 ±20
4.5 -3.5
2.85 -2.21
18 -14
3.57
0.028
-55 to 150
-55 to 150
Thermal Characteristics
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Typ.
---
---
Max.
75
35
Units
V
V
A
A
A
W
W/
Unit
/W
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PDS6710 Datasheet Preview

PDS6710 Datasheet

N+P Channel MOSFETs

No Preview Available !

60V N+P Dual Channel MOSFETs
N-CH Electrical Characteristics (TJ=25 , unless otherwise)
noted)
Off Characteristics
Symbol
Parameter
Conditions
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VDS=60V , VGS=0V , TJ=25
VDS=48V , VGS=0V , TJ=125
VGS=±20V , VDS=0V
PDS6710
Min.
60
---
---
---
---
Typ.
---
0.05
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/
uA
uA
nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
gfs
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Forward Transconductance
VGS=10V , ID=6A
VGS=4.5V , ID=3A
VGS=VDS , ID =250uA
VDS=10V , ID=4A
--- 45 54 m
--- 52 63 m
1.2 1.8 2.5
V
--- -4.2 --- mV/
--- 4.2 ---
S
Dynamic and switching Characteristics
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Total Gate Charge2 , 3
Gate-Source Charge2 , 3
Gate-Drain Charge2 , 3
Turn-On Delay Time2 , 3
Rise Time2 , 3
Turn-Off Delay Time2 , 3
Fall Time2 , 3
VDS=30V , VGS=10V , ID=4A
VDD=30V , VGS=10V , RG=3.3
ID=1A
Ciss Input Capacitance
Coss Output Capacitance
VDS=15V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, F=1MHz
--- 14 21
--- 2.9
5
nC
--- 2.3
4
--- 3.9
7
--- 12.6 24
--- 23.1 44
ns
--- 6.7 13
--- 800 1160
--- 380 550 pF
--- 115 170
--- 1.7 3.4
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Conditions
IS Continuous Source Current
ISM Pulsed Source Current
VG=VD=0V , Force Current
VSD Diode Forward Voltage
VGS=0V , IS=1A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
Min.
---
---
---
Typ.
---
---
---
Max.
4.5
9
1
Unit
A
A
V
Potens semiconductor corp.
2
Ver.1.00


Part Number PDS6710
Description N+P Channel MOSFETs
Maker Potens semiconductor
Total Page 6 Pages
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