PDS6710 - N+P Channel MOSFETs

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

Fast switching.
Green Device Available.
Suit for 4.5V Gate Drive.

Potens semiconductor

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Datasheet Details

Part number	PDS6710
Manufacturer	Potens semiconductor
File Size	858.35 KB
Description	N+P Channel MOSFETs
Datasheet	PDS6710 Datasheet
Additional preview pages of the PDS6710 datasheet.

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Full PDF Text Transcription

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60V N+P Dual Channel MOSFETs General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D2 D2 D1 D1 G2 G1 S2 S1G1 D1 G2 S1 D2 2 S2 PDS6710 BVDSS 60V -60V RDSON 54m 105m ID 4.5A -3.5A Features  Fast switching  Green Device Available  Suit for 4.

Published: Aug 18, 2018 |