PDS6808 datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 60V, 10A, RDS(ON) =34mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Mot.

Application

SOP8 Dual Pin Configuration D2 D2 D1 D1 D1 G1 G2 G2 S2 S1G1 S1 D2 S2 BVDSS 60V RDSON 34m ID 10A Features

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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