PDS6904-5 datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 65V,16.7A, RDS(ON) =14mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* M.

Application

SOP8 Pin Configuration D DD D SS SG G D S BVDSS 65V RDSON 14m ID 16.7A Features
* 65V,16.7A, RDS(ON) =14mΩ.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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