PDS6966A Datasheet (Potens semiconductor)

PDS6966A, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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PDS6966A Features

* 60V,14A, RDS(ON) =8.8mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Networking

* Load Switch

* LED applications

* Quick Charger Applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS I