PDS3807 datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* -30V,-7A, RDS(ON) =23mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications SOP8 Pin Configuration D1D2D2 D1.

Application

BVDSS -30V RDSON 23m ID -7A Features
* -30V,-7A, RDS(ON) =23mΩ@VGS = -10V
* Fast switching
* Green Dev.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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